Upgrade of N Channel (BVdss =400- 600 Volts) MOS Products

It is generally acknowledged that the Fairchild line of MOSFETS have set high standards in the industry for their level of quality and reliability in even the most demanding Automotive Applications. Building on this quality history, Fairchild is currently in the process of upgrading its n-channel MOS Products with drain to source voltages 400-500V to even higher levels of performance with our new MOSFET products. We began this process earlier with our conversion announcement involving our low voltage products. Customer input and acceptance of our first two stages has been outstanding.

Some of the key improvements are as follows:

• The new MOSFETs have, on average, 20% lower Rdson when compared to standard MOSFETs.
• The new MOSFETs have 25% lower switching losses.
• Lower Gate Leakage and input capacitance.
• Tighter Parametric control due to use of steppers and self aligned technology

Electrical parameter and performance improvements are:

• The new MOSFET replacements will meet or exceed standard MOSFET data sheet specifications. A new updated datasheet will be released to reflect the improved performance.

In addition to these performance advantages, the new MOSFET replacements are built using Fairchild’s self aligned P+ technology on steppers.

Fairchild intends to phase over to the New MOSFETs as replacements for our older generation MOSFET technology product on September 1, 2000.

Additional information and reliability data concerning these improvements can be found at: