2009 Product Change Notification (PCN)
| PCN# | PCN Date | Description of Change | Notification |
| Q4094301 | 10/29/2009 | (From): Closure of the Bucheon, Korea 4-inch fab and Phenitec 4-inch fab (To): Transfer to Bucheon, Korea 5-inch and Phenitec 5-inch |
Q4094301.pdf |
| Q2091901 | 10/23/2009 | (From): Products assembled in the SC70 package using the currently qualified mold compounds shown below. (To): Products assembled in the SC70 package using the new alternative mold compounds shown below. |
Q2091901.pdf |
| Q3093804 | 10/05/2009 | (From): Over-Voltage Threshold Detect: Min 5.8V Typ 6.0V Max 6.2V (To): Over-Voltage Threshold Detect: Min 5.8V Typ 6.2V Max 6.5V |
Q3093804.pdf |
| Q3093802 | 10/02/2009 | (From): Zener Iz Current Condition Change from 5mA (To): Zener Iz Current Condition Change from 2mA |
Q3093802.pdf |
| Q3093703 | 09/28/2009 | (From): Affected devices use normal molding process with support pins, two support pin holes will be left on package. (To): Affected devices will use molding process with retractive support pin, no support pin holes will be left on package. |
Q3093703.pdf |
| Q3093001 | 09/15/2009 | From): Products assembled in the 8-, 16-, and 28-lead SOIC packages assembly at Amkor Technologies - Philippines (ATP) using EME-6300H or EME-6600H mold compound as shown in table 1. (To): Products assembled in the 8-, 16-, and 28-lead SOIC packages assembly at ATP using EME-G600 low halogen mold compound as shown in table 2. |
Q3093001.pdf |
| Q3093201 | 09/14/2009 | (From): 4um/40V fab process in Bucheon, Korea. (To): 1.5um/40V fab process in Bucheon, Korea. Functionality and electrical characteristics remain within current datasheet specifications. |
Q3093201.pdf |
| Q3093502 | 09/11/2009 | (From): 1.0 Unit Qty per Box: A. For Straight Leads: 1000 pcs per intermediate box and 8000 pcs per shipping box B. For Formed Leads: 1000 pcs per intermediate box and 6000 pcs per shipping box 2.0 Box Dimensions: A. Intermediate Box 570x150x47mm for straight leads. 570x150x62mm for formed leads. B. Shipping Box: 580x325x215mm for both straight and formed leads (To): 1.0 Unit Qty per Box: 800pcs per intermediate box and 3200 pcs per shipping box for both straight and formed leads. 2.0 Box Dimensions: A. Intermediate Box 560x143x51.5mm for both straight and formed leads. B. Shipping Box: 590x315x215mm for both straight and formed leads |
Q3093502.pdf |
| Q3093302 | 09/10/2009 | (From): Singulated Testing (To): Wafer Level Testing |
Q3093302.pdf |
| Q3093501 | 09/09/2009 | (From): Selected devices that are currently tested and packed in Amkor Technologies, Inc., Taiwan are back laminated. Back laminate is a polyester tape applied to the back of the units to minimize package chips during saw dicing. (To): The selected devices will be manufactured without back laminates. Overall dimensions of the package will remain unchanged. The package chipping specification for non-laminated device will remain the same as back laminated device. Units? marking contrast maybe affected and adjustment to the mark vision system?s parameter on the mounter maybe required when changing from back laminated units to non-back laminated units. Existing warehouse inventories with back laminate will continue to be shipped until the inventories have been exhausted. Fairchild will then inform affected customers on the phasing in of non-laminated products. Fairchild will control the shipment of devices to ensure no mixing of back laminated and non-laminated products within a shipment. |
Q3093501.pdf |
| Q3093003 | 09/08/2009 | (From): Wirebond material using 2.0 mil Gold (Au) wire. (To): Wirebond material using 2.0 mil Copper (Cu) wire. |
Q3093003.pdf |
| Q3092902 | 08/17/2009 | (From): 4inch diameter, Bucheon, Korea 82-3, Dodang Dong, Wonmi Ku, Kyeonggy Do, Korea (To): 5inch diameter, Bucheon, Korea 82-3, Dodang Dong, Wonmi Ku, Kyeonggy Do, Korea |
Q3092902.pdf |
| Q1090304 | 08/13/2009 | (From): Selected Schottky Diode products that are currently manufactured using the 6-inch line at More Power Electronics Corporation (MPEC). The current Top Metallization and Backside Condition use TiNiAg material. (To): Selected Schottky Diode products will be manufactured using the 5-inch line at Taiwan Semiconductor Company Ltd. (TSC). The new Top Metallization and Backside Condition will use using TiNiAu material. |
Q1090304.pdf |
| Q3092702 | 08/10/2009 | (From): KSC5502DTM is currently manufactured at SP Semiconductor & Communication Co Ltd. located in Korea with package outline dimensions that do not fully conform to the JEDEC requirement. (To): KSC5502DTM will be manufactured at Fairchild Semiconductor located in Suzhou, China with package outline dimensions that will conform to JEDEC requirement. |
Q3092702.pdf |
| Q3093101 | 08/06/2009 | (From): The wafer fabrication is currently performed at the Fairchild Semiconductor South Portland Maine 150mm line. The WLCSP (wafer level chip scale package) solder bump process is currently performed at the Amkor Technology Korea K4 site. The WLCSP backside laminate and die processing is currently performed at the Amkor Technology Taiwan T3 site. (To): Wafer fabrication at the Fairchild Semiconductor South Portland Maine 200mm line or 150mm line. WLCSP solder bump at the Fairchild Semiconductor South Portland Maine CSP facility or the Amkor Technology Korea K4 facility. WLCSP backside laminate and die processing at the Fairchild Semiconductor Penang Malaysia facility or Amkor Technology T3 facility. |
Q3093101.pdf |
| Q3093002 | 08/05/2009 | (From): The current width of the scribe line is 120 um (To): The new width of the scribe line is 90 um. This change does not affect the balls spacing or position, and the products will fit in the same land pattern indicated in the data sheet. If required, the pocket size of the tape and reel are reduced to insure the smaller die will not rotate inside the pocket |
Q3093002.pdf |
| Q3092901 | 07/20/2009 | (From): Selected devices that are currently tested and packed in Amkor Technologies, Inc., Taiwan are back laminated. (To): The selected devices will be manufactured without back laminates. Overall dimensions of the package will remain unchanged. |
Q3092901.pdf |
| Q1090803 | 07/15/2009 | (From): Selected Intellimax products currently manufactured using the 6-inch line at Fairchild Semiconductor, South Portland, Maine. The affected products currently have their bumping done at Unitive Electronics Inc., North Carolina and are manufactured with backmetal at Fairchild Semiconductor in Cebu, Philippines. (To): Selected Intellimax products will also be manufactured using the 8-inch line at Fairchild Semiconductor, South Portland, Maine. The affected devices will have their bumping done at Amkor Technology, Inc. Korea or at Fairchild Semiconductor, South Portland, Maine, and manufacturing will be done with no backmetal at Fairchild Semiconductor in Penang, Malaysia. |
Q1090803.pdf |
| Q2092402 | 07/14/2009 | (From): LED die supply from Fairchild Singapore Foundry. (To): LED die supply for these products will now be fabricated by a foundry in Japan. |
Q2092402.pdf |
| Q2092501 | 07/13/2009 | From): The current exposed dap width dimension is 1.10mm. (To): The new exposed dap width dimension will be changed to 0.85mm. |
Q2092501.pdf |
| Q2092602 | 07/09/2009 | (From): Fairchild FXLP34 device manufactured on the FS35C Fab process line located in Maine and assembled in Micropak at Hana, and SC70 at Fairchild Malaysia. (To): Please see details in "Change To" section below. |
Q2092602.pdf |
| Q2092103 | 07/08/2009 | From): Standard Discrete products fabricated by Tianjin wafer foundry. (To): Standard Discrete products fabricated by Li-Je wafer foundry |
Q2092103.pdf |
| Q2092502 | 07/06/2009 | (From): Bump process for WLCSP is currently performed at Amkor - Korea ( K4 site ) (To): Fairchild Maine will be qualified for the bump process of WLCSP. All pitch sizes of WLCSP product will be qualified: 0.5mm pitch with 300um solder sphere, 0.4mm pitch with 250um solder sphere, 0.5mm pitch with 250um solder sphere. |
Q2092502.pdf |
| Q3092701 | 06/30/2009 | This notification is for your information only |
Q3092701.pdf |
| Q2092102 | 06/12/2009 | (From): Ilim pre-trim distribution centered at 1.12 A (To): Ilim pre-trim reduced by 60 mA to center the distribution at 1.06 A |
Q2092102.pdf |
| Q2091702 | 06/11/2009 | (From): The current die attach method is Wafer Backside Lamination (WBL) die attach isolation. The current assembly and testing is located at Subcon ASE (Advanced Semiconductor Engineering Inc.). (To): The die attach method will be changed to Polyimide tape die attach isolation. The assembly and test will be transferred to Fairchild Semiconductor, located in Cebu Philippines. |
Q2091702.pdf |
| Q2092002 | 06/05/2009 | (From): All Power Conversion Taiwan products assembled and tested at subcontractors in the SO-8 package. Please refer attached file for assembly material and marking format used. (To): All Power Conversion Taiwan products assembled and tested at Fairchild's Penang, Malaysia manufacturing facility in the SO8 package. Please refer attached file for assembly material and marking format used. |
Q2092002.pdf |
| Q2092101 | 06/04/2009 | (From): Fairchild products currently manufactured using Fairchild's 6-inch class 1, fab process in South Portland, ME. (To): Products will now be produced on both 6 inch and 8 inch wafer Diameters. Manufacturing will occur in the same 6-inch Class-1 fab currently producing these products. In some cases, new 8 inch equipment will be added to accommodate the 6 to 8 inch processing conversion. Die size, design, geometry, or layout of the affected products remains un-changed. 8 inch products will be fully compliant to all published data sheet specifications and will be completely interchangeable with current 6-inch product. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. |
Q2092101.pdf |
| Q2092001 | 05/20/2009 | (From): Fab Location: More Power Electronics Corporation (MPEC) Die size: 753um x 956um Top Metallization: TiNiAg Backside Condition: TiNiAg Wafer Diameter: 6 inch (To): Fab Location: Taiwan Semiconductor Company Ltd. (TSC) Die Size: 748um x 944um Top Metallization: TiNiAu Backside Condition: TiNiAu Wafer Diameter: 5 inch |
Q2092001.pdf |
| Q1091203 | 05/20/2009 | (From): Datasheet changes to Idd max, td2 max, tRise max, tFall max as listed below. (To): Datasheet changes to Idd max, td2 max, tRise max, tFall max as listed below. |
Q1091203.pdf |
| Q2091801 | 05/14/2009 | (From): Assembly/Test Site is AUK(Korea) (To): Assembly/Test Site is AUK-Dalian(China) |
Q2091801.pdf |
| Q1090804 | 05/12/2009 | (From): Select products assembled in the 8-lead TSSOP package at Plant 1 of UTAC Thai Limited (UTL) in the Bangna sub-district of Bangkok, Thailand. (To): Select products assembled in the 8-lead TSSOP package at Plant 2 of UTAC Thai Limited (UTL) in Wellgrow, Thailand (in Chachoengsao province). |
Q1090804.pdf |
| Q2091802 | 05/08/2009 | (From): Selected products in the PQFN 3.3x3.3 8ld package assembled at Fairchild Semiconductor in Cebu, Philippines and selected products in the MLP 3.3x3.3 8ld package assembled at Carsem in Malaysia. (To): Selected MOSFET products will be assembled at Fairchild Semiconductor in Penang, Malaysia in MLP 3.3x3.3 8ld package. |
Q2091802.pdf |
| Q2091703 | 05/07/2009 | (From): 1) KTMC5400LK mold compound 2) Direct Bonded Copper (DBC) supplier (Curamic) 3) Leadframe raw material supplier (KFC) Description of Change (To): 1) SI7200DT mold compound 2) Direct Bonded Copper (DBC)supplier (KCC) 3) Leadframe raw material supplier (PMC90) |
Q2091703.pdf |
| Q1091102 | 04/24/2009 | (From): The attached list of Discrete products assembled and tested at Fairchild Semiconductor Suzhou China are without a lot code after the date code marked on the part. (To): Addition of a 2-digit lot trace code following the marked date code on affected Discrete products assembled and tested at Fairchild Semiconductor Suzhou China. |
Q1091102.pdf |
| Q1091204 | 04/20/2009 | (From): Datasheet changes to Idd max, td1 max, td2, tRise max, tFall max as listed below (To): Datasheet changes to Idd max, td1 max, td2, tRise max, tFall max as listed below |
Q1091204.pdf |
| Q1090602 | 04/15/2009 | (From): 1. TO3P 3 leads is currently being manufactured at SPS (SP Semiconductor & Communication Co Ltd) located in Korea. 2. Current package outline refer to attached outline drawing. 3. Current die attach softer solder uses 88Pb10Sn2Ag. (To): 1. Qualify Fairchild Semiconductor located in Suzhou, China as a new Assembly and Test manufacturing site for TO3P 3 leads package. 2. Suzhou assembled new TO3P 3 leads package outline has one different dimension from the current one, but both dimensions meet the EIAJ dimensional standards. (refer to below detail POD comparison) 3. New die attach softer solder uses 93.5Pb5Sn1.5Ag. |
Q1090602.pdf |
| Q2091404 | 04/14/2009 | (From): Selected MOSFET products assembled in Power 56 package, in which the current Die Attach Pad & Leadpost plating is NiPdAu; current Gate Leadpost Plating is NiPdAu; current Gate Interconnect is 5mil Al wire; current Singulation Method is Saw-Singulation and current Plating Finish is NiPdAu. To view "From/To" Dimensional Outline, please refer to the attached table "Dimensional Outline." (To): The alternate Die Attach Pad & Leadpost plating will be Bare Cu; alternate Gate Leadpost Plating will be Ag; alternate Gate Interconnect will be 2mil Cu wire; alternate Singulation Method will be Punch-singulation and the alternate Plating Finish will be Pure Sn. |
Q2091404.pdf |
| Q2091501 | 04/10/2009 | (From): Total of 50 units in a tube with the use of pin stopper. (To): Total of 55 units in a tube with the use of rubber stopper. No change in tube size. |
Q2091501.pdf |
| Q4084701 | 04/10/2009 | (From): Minimum test specification of Fall Time of Output Current (Tf) from Min = 2.0 us. (To): Minimum test specification of Fall Time of Output Current (Tf) to Min = 1.5 us. |
Q4084701.pdf |
| Q1090802 | 04/10/2009 | (From): 50um Gold (Au) bonding wire. (To): 50um Copper (Cu) bonding wire |
Q1090802.pdf |
| Q1091301 | 04/09/2009 | (From): Lite-on Shanghai as the manufacturing site for surface mount Schottky devices. (To): Taiwan Semiconductor and Panjit Electronics as additional manufacturing sites for surface mount Schottky devices. |
Q1091301.pdf |
| Q1080906-H | 04/08/2009 | (From): Optoelectronics detector devices utilized in the assembly of the attached affected products are currently fabricated at China Resources (CRS) 4 inch fabrication facility located in Hong Kong, China. (To): Optoelectronics detector devices utilized in the assembly of the attached affected products will be fabricated at CRS 6 inch fabrication facility located in Wuxi, China. There will be no detector device, design, die size or die thickness changes for the affected FSID's. Product assembled with detector die manufactured at Wuxi facility will be fully compliant to all publish databook specifications and will be interchangeable with products manufactured at the existing wafer fab location. Quality and reliability will remain at the highest levels already demonstrated with Fairchild existing products. |
Q1080906-H.pdf |
| Q1091303 | 04/08/2009 | (From): TSSOP 16/28/64L and PDIP 8/16/20/24L packages assembly at Amkor Technologies - Philippines (ATP) using EME 7050B, EME 7351T and EME 6300H mold compound as shown in table 1. (To): TSSOP 16/28/64L and PDIP 8/16/20/24L packages assembly at ATP using EME G700K and EME G600C low-halogen mold compounds as shown in table 2. |
Q1091303.pdf |
| Q1091302 | 04/08/2009 | (From): Products assembled in the 8-lead SOIC packages at Carsem using EME 6600RA mold compound as shown in table 1. (To): Products assembled in the 8-lead SOIC packages at Carsem using EME G600C low halogen mold compounds as shown in table 2. |
Q1091302.pdf |
| Q2091401 | 04/07/2009 | (From): 8um/40V fab process in Bucheon, Korea (To): 1.5um/40V fab process in Bucheon, Korea. Functionality and electrical characterics remain within current datasheet specifications. |
Q2091401.pdf |
| Q1091201 | 03/31/2009 | (From): Products assembled in the 6-lead and 8-lead MLP packages at Carsem using either MP8000CSMF1 or EME-7730LF mold compound as shown in table 1. (To): Products assembled in the 6-lead and 8-lead MLP packages at Carsem using either EME-G600 or EME-G770HC low-halogen mold compounds as shown in table 2. |
Q1091201.pdf |
| Q4085001 | 03/25/2009 | (From): The material composition of lead frame is bare copper with full Ni-plating; Mold epoxy compound is EME6600CS. (To): The material composition of lead frame is bare copper without any plating; Mold epoxy compound change to SI7200DX2. (refer to below detail comparison) |
Q4085001.pdf |
| Q1090702 | 02/25/2009 | (From): Selected Intellimax products currently manufactured using the 6-inch line at Fairchild Semiconductor, South Portland, Maine. (To): Selected Intellimax products will also be manufactured using the 8-inch line at Fairchild Semiconductor, South Portland, Maine. |
Q1090702.pdf |
| Q1090701 | 02/25/2009 | (From): Current VZ Datasheet Limits (To): Industry Standard VZ Datasheet Limits |
Q1090701.pdf |
| Q4084604 | 02/23/2009 | (From): Affected FSIDs released with Non-Green EMC: KTMC-3097SM (To): Affected FSIDs released with Green EMC: SG-8300HK |
Q4084604.pdf |
| Q1080905-B | 02/19/2009 | (From): 1) Use of 2.0mil Au wire. Description of Change (To): 1) Use of 2.0mil Cu wire. |
Q1080905-B.pdf |
| Q4084702 | 02/17/2009 | (From): Eutectic die attach process, TiNiAgSn backmetal and Plaskon AMC-2RC mold compound (To): In-Process Cure Adhesive die attach process, TiNiAg backmetal and KCC KTMC5200G |
Q4084702.pdf |
| Q1090303 | 02/04/2009 | (From): Affected FSIDs released with EMC: KTMC1030NFE and SL-7300HXM. (To): Affected FSIDs released with EMC: SI-7200DX2. |
Q1090303.pdf |
| Q1090501 | 02/02/2009 | (From): The profile of the carrier tape carrier tape used at Amkor -T3 facility has a chamfer at the top of the pocket. This tape is in compliance with EIA-481 specification. (To): The profile of the carrier tape used at Fairchild - Penang facility does not have the chamfer at the top of the pocket. This tape is in compliance with EIA-481 specification. |
Q1090501.pdf |
| Q1090306 | 01/23/2009 | (From): Wire changed for MLP 6x6 package from Au-wire. (To): Wire changed for MLP 6x6 package to Cu-wire. |
Q1090306.pdf |
| Q1090301 | 01/23/2009 | (From): TakCheong,SOD-323 package,clip bonding process (To): TakCheong,SOD-323 package,wire bonding process |
Q1090301.pdf |
| Q1090101 | 01/22/2009 | Packing Material Dimensions (Rails/Boxes) (From): Packing box with old dimension (To): Packing box with new dimension |
Q1090101.pdf |
| Q2082102-A | 01/20/2009 | (From): The current PLCC-28L pacakge is assembled in Unisem. (To): All manufacturing assembly is being transferred to Amkor, Philippine for 28 lead PLCC package due to the discontinuance of assembly at Unisem. The change is also involving qualification of green mold compound. |
Q2082102-A.pdf |
| Q1090201 | 01/20/2009 | (From): 1) Fairchild products currently manufactured using Fairchild's 150mm class 1 fab process in South Portland, Maine. 2) The 42-ball BGA package currently using RoHS compliant Bill of Materials(BOM). (To): 1) Products will now be produced on 200mm wafers at the Fairchild Semiconductor South Portland, Maine fab. 2) The 42-ball BGA package in addition to being RoHS compliant is now fully green compliant. Die size, design, geometry and layout of the affected products remains unchanged. The products will be fully compliant to all published datasheet specifications. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. |
Q1090201.pdf |
| Q4085201 | 01/12/2009 | (From): TO3PF 3 leads products are currently manufactured at SP Semiconductor & Communication Co Ltd. located in Korea using materials referenced in below table. (To): TO3PF 3 leads products will be manufactured at Fairchild Semiconductor located in Suzhou, China using materials referenced in below table. Changes in soft solder die attach material, leadframe base materials have been made to align with standard materials and process currently utilized in FSC, Suzhou Manufaturing line. Package outline drawing of the affected products remains un-changed. Product will be fully compliant to all published data sheet specifications. Quality and reliability will remain at the highest standards already demonstrated with Fairchild's existing products. |
Q4085201.pdf |
| Q1080906-F | 01/05/2009 | (From): Optoelectronics detector devices utilized in the assembly of the attached affected products are currently fabricated at China Resources (CRS) 4 inch fabrication facility located in Hong Kong, China. (To): Optoelectronics detector devices utilized in the assembly of the attached affected products will be fabricated at CRS 6 inch fabrication facility located in Wuxi, China. There will be no detector device, design, die size or die thickness changes for the affected FSID's. Product assembled with detector die manufactured at Wuxi facility will be fully compliant to all publish databook specifications and will be interchangeable with products manufactured at the existing wafer fab location. Quality and reliability will remain at the highest levels already demonstrated with Fairchild existing products. |
Q1080906-F.pdf |
| Q1081306-B | 01/05/2009 | (From): Optoelectronics detector devices currently fabrication at China Resources (CRS). (To): Optoelectronics detector devices will be fabricated at an alternate source located in Taiwan. Product using die from the alternate source will be fully compliant to all published databook specifications and will be interchangeable with the existing die. Quality and reliability will remain at the highest level already demonstrated with Fairchild existing products. |
Q1081306-B.pdf |
| Q3083904 | 01/05/2009 | From): TO3PF 3 Leads MOSFET products are currently manufactured at SP Semiconductor & Communication Co Ltd. and Enoch located in Korea using materials referenced in below table. (To): TO3PF 3 leads MOSFET products will be manufactured at Fairchild Semiconductor located in Suzhou, China using materials referenced in below table. Changes in soft solder die attach material and leadframe base material which have been made to align with standard materials and process currently utilized in FSC, Suzhou Manufaturing line. Package outline drawing of the affected products remains un-changed. |
Q3083904.pdf |
| Q4085103 | 01/05/2009 | (From): TO220 2 and 3 Leads packing tube from SP Semiconductor/ENOCH located in Korea . (To): TO220 2 and 3 Leads packing tube from Fairchild Suzhou plant. (detail dimension comparison refer to below) |
Q4085103.pdf |


