Features:

• 3-phase IGBT inverter bridge including control IC for gate driving and protection
• 600V/10A to 30A rating
• Single-grounded power supply due to built-in HVIC (eliminates need for optocouplers)
• IGBT switching characteristics matched to system requirements
• Built-in thermistor for over-temperature monitoring
• Ceramic-based substrate result in low leakage current & high isolation voltage
• Adjustable current protection using sense-IGBTs

Benefits:

• Reduced system design time
• Reduced manufacturing time
• Improved manufacturing yields
• More compact system than discrete solution
• Reduced field failure ratio
• Fewer components to order & stock
• Reduced failure ratio